University of Bahrain
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Monte-Carlo simulation of hydrogenated amorphous silicon growth

Show simple item record Bouhekka, A. Kebab, A. Sib, J.D. Bouizem, Y. Benbekhti, M. Chahed, L. 2018-07-26T08:31:49Z 2018-07-26T08:31:49Z 2012
dc.identifier.issn 1815-3852
dc.description.abstract A Monte-Carlo simulation of the growth of hydrogenated amorphous silicon (a-Si:H) thin films deposited by plasma enhanced chemical vapour deposition technique is presented in this work which is based on four fundamental processes that determine the layer growth: (i) random deposition of SiH3 radicals, (ii) desorption, (iii) ‘‘H’’ abstraction and (iv) sticking on a dangling bond. The essential goal of the model is to predict the bulk and the surface properties of films (hydrogen content, dangling bonds, surface roughness...) having different thicknesses and deposited at different substrate temperatures. The effects on the film properties of the incident radical flux of SiH3, directed towards the surface isotropically, on the surface are examined. A rate of content of hydrogen (8–12%) in the bulk is found. We find that surface roughness increases with increasing film thickness, though thin films ( en_US
dc.language.iso en en_US
dc.publisher University of Bahrain en_US
dc.rights Attribution-NonCommercial-ShareAlike 4.0 International *
dc.rights.uri *
dc.subject Simulation
dc.subject a-Si:H thin film
dc.subject Monte-Carlo
dc.subject Growth
dc.subject Hydrogen content
dc.subject Solar cell
dc.title Monte-Carlo simulation of hydrogenated amorphous silicon growth en_US
dc.type Article en_US
dc.source.title Arab Journal of Basic and Applied Sciences
dc.abbreviatedsourcetitle AJBAS

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