University of Bahrain
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Degradation of MOS parameter due to Bias Instability

Show simple item record Kumar, Abhishek 2021-08-18T22:35:50Z 2021-08-18T22:35:50Z 2021-08-19
dc.identifier.issn 2210-142X
dc.description.abstract Aggressive integrated circuits dimension scaling while the supply voltage is not proportionally scaled leads to reliability degradation. Hot carrier injection (HCI) and negative bias temperature instability (NBTI) effect for planner MOS transistor is two primary bottlenecks of the oxide wear-out phase. The lifetime of the devices is truncated by the failure mechanism caused by the aging effect of devices. The accumulation of additional charges into the oxide dielectric and Si-SiO2 interface, result in a shift into threshold voltage, mobility degradation, and oxide breakdown, shows prominent degradation into NMOS due to hot carrier injection (HCI) and into PMOS due to negative bias temperature instability (NBTI) as a function of applied electrical stress, stress time, and temperature. The AC voltage stress is lower compared to DC voltage stress, more carrier diffuses to interface at higher voltage, lower thickness, and higher temperature results in a larger shift in the threshold. The lifetime of a device with a continuous supply of higher voltage leads to degradation with the scaling factor. In this work the numerical simulation of HCI and NBTI impact over MOS parameter degradation explored and found that shift caused by NBTI can be annealed with time, HCI cannot be annealed. en_US
dc.language.iso en en_US
dc.publisher University of Bahrain en_US
dc.rights Attribution-NonCommercial-NoDerivatives 4.0 International *
dc.rights.uri *
dc.subject Reliability en_US
dc.subject Oxide breakdown en_US
dc.subject NBTI en_US
dc.subject HCI en_US
dc.subject Interface Trap en_US
dc.title Degradation of MOS parameter due to Bias Instability en_US
dc.pagestart 21
dc.pageend 28
dc.contributor.authorcountry India en_US
dc.contributor.authoraffiliation School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara en_US
dc.source.title International Journal Of Computing and Digital System en_US
dc.abbreviatedsourcetitle IJCDS en_US

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