dc.contributor.author | Mohamad, Wagah F. | |
dc.date.accessioned | 2018-07-22T08:43:24Z | |
dc.date.available | 2018-07-22T08:43:24Z | |
dc.date.issued | 2006-01-01 | |
dc.identifier.issn | 1815-3852 | |
dc.identifier.uri | https://journal.uob.edu.bh:443/handle/123456789/420 | |
dc.description.abstract | Theoretical and practical calculations of short circuit currents of In-doped Silicon (n) structure have been calculated. Theoretically maximum value of generated current was 5.25 mA at 0.5x1017 cm-3 indium concentrations. Practically the ideal I-V characteristic of the structure is obtained with indium thickness of 1500 °A annealed at 1100 r for an hour. This structure has a knee voltage at 0.8 V with very small value of reverse saturation current and 1.6 ideality factor. The maximum photogenerated current about 2.3 mA is obtained at 0.396x1017 CM-3 of indium concentration. Theoretical & practical results agree that the maximum photo generated current occurs at zero cell output voltage. | en_US |
dc.language.iso | en | en_US |
dc.publisher | University of Bahrain | en_US |
dc.rights | Attribution-NonCommercial-ShareAlike 4.0 International | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | * |
dc.subject | In-doped Silicon | en_US |
dc.subject | IPV Effect | en_US |
dc.subject | Silicon (n) Responsivity | en_US |
dc.title | Short Circuit Currents Improvements of In-doped Silicon (n) Structure | en_US |
dc.type | Article | en_US |
dc.source.title | Arab Journal of Basic and Applied Sciences | |
dc.abbreviatedsourcetitle | AJBAS |
The following license files are associated with this item: