Conductivity and thermoelectric properties of nanostructure tin oxide thin films

Abstract

Tin oxide thin films doped with iron or copper were deposited on glass and porous alumina substrates, using the co-deposition dip coating sol–gel technique. Alumina substrate was prepared by the anodizing technique. Samples were sintered for 2 h at temperature 600 C. The XRD spectrum of deposited samples shows a polycrystalline structure with a clear characteristic peak of SnO2 cassiterite phase. From (I–V) characteristics measured at different temperatures for samples prepared on glass substrates, the density of states at the Fermi level was calculated. Thermoelectric effect was measured with a change of temperature for prepared samples under low pressure 1 mbar. Seebeck coefficient, the carrier concentration, the charge carrier mobility and the figure merit were determined for prepared samples under low pressure 1 mbar. Seebeck coefficient was improved when films were deposited on porous Alumina substrates.