Abstract:
In the upcoming article, we lay down a particular method of devising the frequency parameter of ring oscillators. We also bring about a comparative analysis of ring oscillators, and try to find out a way of relating their frequency characteristics with their inherent resistance and capacitance. The formula derived here is far more simplified as compared to all the others present. Moreover, it allows quick, precise efficient formulation of frequency without much pain. Also a detailed analysis of CMOS and DTMOS based design has been carried out and a parameter has been devised to determine the efficiency of both CMOS and DTMOS. The simulation platform used here is LTSpiceIV and the used models are based on BSIM4.0 level 54 CMOS technology.